Publication Title Effect of Nitrogen on the Optical and Structural Properties of Aluminium-Doped Zinc Oxide Thin Films Synthesized via AACVD
Publication Type Published Research
Publisher Nigerian Journal of Environmental Sciences and Technology (NIJEST)
Paper Link https://nijest.com/wp-content/uploads/2025/03/68-85_11_Vol.-9-No.-1_NIJEST-2.pdf
Publication Authors Imoni-Ogbe K., Osiele O.M, Nwachuku D.N, and Enajite O.
Year Published 2025-03-01
Abstract This research produces AZO thin films through AACVD technology with N? as the carrier gas and analyzed the structural and optical effects and morphological changes that occur from 0% to 20% Al doping. The AACVD deposition process occurred at 400°C to form thin films which received subsequent annealing at 450°C under a nitrogen environment. The X-ray Diffraction (XRD) analysis showed excellent crystallinity which produced intense peak signals at (220) and (311) and (222). The films developed smaller crystallites and higher numbers of dislocations because the increased Al doping levels generated increased lattice strain and structural defects. The thickness measurements using profilometry recorded 102 nm in undoped ZnO and 115 nm in 20% Al-doped ZnO samples. UV absorbance measurements showed enhanced peak intensities that became more pronounced in the samples doped at 5% and lower concentrations. The ZnO bandgap energies increased gradually from 3.21 eV in pristine ZnO to 3.33 eV with 20% Al doping due to the Burstein–Moss effect. Higher levels of doping exceeding 15% expanded the optical activity range across multiple wavelengths to boost the films suitability in optoelectronics. This study shows that employing nitrogen as a carrier gas affects the properties of AZO thin films by creating higher dislocation densities and causing minor film thickness expansion. The films are good candidates for transparent conductive oxide (TCO) uses because they have a tuned optical bandgap and better transparency at certain doping levels. The enhanced optical properties and structural stability suggest that these films could be integrated into solar cells for improved light absorption, utilised in displays for enhanced transparency and conductivity, and applied in smart windows for dynamic light modulation.
Publication Title Vertical electric drilling for evaluating aquifer levels in Ukwani and ensuring quality drinking water
Publication Type journal
Publisher INNSpub
Paper Link https://www.innspub.net/wp-content/uploads/2023/08/JBES-V23-No1-p87-93.pdf
Publication Authors JO. Ataman OC. Molua, AO. Ukpene, DA. Ogwu, K. Eseka, M. Edobor, JO. Vwavware, K. Imoni-Ogbe
Year Published 2023-07-01
Abstract This study aims to investigate the aquifer levels in the localized area of Ukwani, with a specific focus on the water depths of Obeti, Oliogo, and Ebedei communities. The research utilizes drilling data to determine the water depths and availability of water bodies in these areas. The results revealed that the water depth of Obeti ranges from 6m to 34m, indicating a significant variation in the aquifer level. Similarly, the water depth of Oliogo varies between 10m and 80m, reflecting substantial differences in groundwater availability. Ebedei exhibits a broader range, with water levels varying from 4m to 100 m. The drilling data confirms the presence of water bodies at depths of 25m and 30m in these areas, highlighting potential reservoirs for groundwater extraction and utilization. This study provides valuable insights into the aquifer levels in Ukwuani, shedding light on the variations in water depths and identifying areas with potential water resources. These findings contribute to informed decision-making for water management and resource planning in the region.
Publication Title Fabrication of Aluminium-Doped Zinc Oxide (AZO) Thin Films Using Nitrogen as a Carrier Gas in Aerosol-Assisted Chemical Vapour Deposition (AACVD)
Publication Type journal
Publisher Nig. J. Pure & Appl. Sci
Paper Link https://njpas.com.ng/wp-content/uploads/2025/05/10.NJPAS-25-A05.pdf
Publication Authors Imoni-Ogbe, K.¹, Osiele, O.M.², Akpoveta, O.V.³, Ekpekpo, A.?, Enajite, O.?, and Arigbede, J.?
Year Published 2025-05-05
Abstract This study investigated the fabrication of Aluminium-doped Zinc Oxide (AZO) thin films via Aerosol-assisted Chemical Vapour Deposition (AACVD) technology using Nitrogen as the carrier gas, with their structural, optical, and morphological properties examined across different Aluminium-doping levels, ranging from 0% to 20%. The deposition process was carried out at a temperature of 400°C, which was proceeded by annealing at a temperature of 450°C in a Nitrogen environment. The X-ray Diffraction (XRD) analysis confirmed a high crystallinity with strong peak signals at (100), (110), (200) and (222) planes. An increase in Aluminium-doping level led to smaller crystallites and higher dislocation densities due to enhanced lattice strains and structural defects. UV absorbance analysis revealed higher peak intensities, especially in samples with 5% or lower doping. The ZnO bandgap energy increased from 3.36 eV in pristine ZnO to 3.78 eV at 20% Al doping, influenced by the Burstein–Moss effect. A broadened optical activity range was observed at doping levels above 15%, enhancing the films’ potential for optoelectronic applications. The usage of Nitrogen carrier gas led to higher dislocation densities and slight increases in film thickness. With a tuned optical bandgap and high transparency at specific doping levels, these AZO films are well-suited for transparent conductive oxide (TCO) applications, including solar cells, display technologies, and smart windows.